mechanical data 1 r w h v dice size a x =a y :210um/b x =b y =85um t( ? ?] 4 (gross die:151,780pcs/good die>141,155pcs) chip thickness 138um12um scribe line width 40um top metal al/au/ag back side metal al/au/ag/sn parameter 6 \ p e r o & r q g l w l r q v 9 d o x h 8 q l w reverse stand - of voltage v rwm 3.3 v peak pulse power p pp tp=8/20us 45 * w peak pulse current i pp tp=8/20us 4.0* a electrostatc discharge v esd iec61000 - 4 - 2 level - 4 8(contact) 15(air) kv max.juncton temp. tj 150 c parameter 6 \ p e r o & r q g l w l r q 0 l q 7 \ s 0 d [ 8 q l w breakdown voltage v br i t =50ma 3.5 v reverse leakage current i r v=3.3v 0.05 0.40 ua snap - back voltage v sb i sb =50ma 2.8 v clamping voltage v c i pp =1.0a i pp =4.0a 9.0* 12.0* v diode capacitance c j v r =0v f=1mh z 7.0 pf characteristics ta=25 c chip bi - directional tvs diode in wafer form, 4 inch futurewafer technology co.,ltd www.futurewafer.com.tw+886 - 3 - 3573583 fb - 3v3s51 notes: ( 1)sampling testng:no bad dice inking/guaranteed good die >95% (2)testng follow customer (3)tj=ta+rth(j - a)*(pf+pr),where rth(j - a) - thermal resistance,pf - forward power dissipaton, pr - revers power dissipaton (4)**for device testng ew1608b2 - fw - a 2 1
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